Ruiying Shu

III-nitride semiconductors such as InGaN and GaN underpin a broad range of advanced technologies, from high-efficiency LEDs, laser diodes, and micro-displays to power electronics, ultraviolet photonics, and emerging quantum devices. Their remarkable electronic and optical properties enable bright, efficient, and high-speed operation even in extreme environments. However, achieving next-generation device performance demands an atomic-level insight of how defects, strain, and compositional fluctuations shape their electronic structure and functional behaviour. 

My research applies Atom Probe Tomography (APT) to investigate stacking fault (SF) defects in III-nitride semiconductors, an important type of extended planar defect that strongly affects their optical and electronic performance. This work represents one of the first successful demonstrations of using APT to directly visualise and quantify SFs in III-nitrides, providing new three-dimensional insights into their chemical inhomogeneity, dopant segregation, and polarity-dependent behaviour. These findings establish APT as a powerful tool for studying extended defects in compound semiconductors and open new opportunities to optimise epitaxial growth and enhance the performance of light-emitting, power, and quantum devices. 

This project is in collaboration with the University of Cambridge, supported by the EPSRC and the Henry Royce Institute.