Device Materials: Semiconductors, quantum dots

Semiconductors

Atom probe tomography is playing an increasingly important role in the development of semiconductor devices. The optical and/or electronic properties of such systems can be extremely sensitive to local chemical environments.  In some cases the presence of even a handful of impurity atoms can dramatically affect device performance. Hence, with its powerful combination of very high spatial and chemical resolution, APT brings unique atomic-scale insight to the design, development and failure analysis of semiconductor systems.
Current  semiconductor research within the Atom Probe Group  includes: investigation into multi-crystalline silicon (mc-Si) solar cells with the Semiconductor and Silicon Photovoltaics Group (http://semiconductor.materials.ox.ac.uk/);  a long standing collaboration with Cambridge Centre for Gallium Nitride (http://www.gan.msm.cam.ac.uk/people/r-oliver/); and characterisation of ion-implanted phosphorus with applications to Si-based quantum computing in collaboration with the Melbourne Centre of Excellence for Quantum Computation & Communication Technology.

 

 

InGaN quantum well layers. Courtesy of Dr Fengzai Tang, University of Cambridge.

For more details on this project, please contact J. Douglas or Dr. Michael Moody.